• DocumentCode
    271
  • Title

    Electron-Field-Emission Properties of Gallium Compound by Ammonification of Ga 2O _{3} Nanowires

  • Author

    Han-Ting Hsueh ; Wen-Yin Weng ; Tsung-Ying Tsai ; Shoou-Jinn Chang

  • Author_Institution
    Nat. Nano Devices Labs., Tainan, Taiwan
  • Volume
    12
  • Issue
    5
  • fYear
    2013
  • fDate
    Sept. 2013
  • Firstpage
    692
  • Lastpage
    695
  • Abstract
    The authors report the growth of β-Ga2O3 nanowires and the conversion of β-Ga2O3 nanowires to gallium nitride (GaN) nanowires through ammonification, and the fabrication of nanowires-based field emitters. The threshold field of Ga2O3 nanowires was 5.65 V/μm. After ammonification under 750, 800 and 900°C, the threshold fields became smaller which were 3.82, 3.03 and 2.12 V/μm, respectively. While the ammonification temperature was increased to 950°C, the threshold field drastically increased to 13.13 V/μm.
  • Keywords
    III-V semiconductors; electron field emission; gallium compounds; nanofabrication; nanowires; semiconductor growth; wide band gap semiconductors; Ga2O3; GaN; electron-field-emission properties; gallium compound; gallium nitride nanowires; nanowire ammonification; nanowire growth; nanowire-based field emitters; temperature 750 degC; temperature 800 degC; temperature 900 degC; threshold fields; Ga$_{2}$O$_{3}$ ; Gallium nitride (GaN); nanowires;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2013.2268854
  • Filename
    6542739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=271