• DocumentCode
    2710101
  • Title

    Yb impurity influence on parameters of PbTe crystals grown from the melt

  • Author

    Beshlin, V. ; Lungu, L. ; Nicoric, A. ; Nicorici, Valentina

  • Author_Institution
    Gebze Inst. of Technol., Turkey
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    131
  • Abstract
    In the temperature range 77-300 K, the electrophysical properties of PbTe:Yb monocrystals obtained by the Bridgmen method were studied. It was shown that the presence of Yb leads to an improvement of the structural characteristics and the reduction of the charge carrier concentration down to ~1014 cm-3
  • Keywords
    Hall effect; IV-VI semiconductors; carrier density; crystal growth from melt; crystal microstructure; electrical conductivity; lead compounds; semiconductor doping; semiconductor growth; ytterbium; 77 to 300 K; Bridgmen method; PbTe crystals; PbTe:Yb; PbTe:Yb monocrystals; Yb impurity influence; charge carrier concentration reduction; electrophysical properties; growth from melt; structural characteristics improvement; Atmosphere; Charge carriers; Crystals; Doping; Impurities; Isothermal processes; Physics; Temperature dependence; Temperature distribution; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2000. CAS 2000 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5885-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2000.890203
  • Filename
    890203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2710101