Title :
Simulation of electrical and optical characteristics for InP/InGaAs/InP p-i-n photodiodes
Author :
Wang, Xiaodong ; Hu, Weida ; Chen, Xiaoshuang ; Tang, Hengjing ; Li, Tao ; Gong, Haimei ; Lu, Wei
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Abstract :
2D simulation of dark current and photoresponse for InP/InGaAs/InP photodiode is carried out by Sentaurus DEVICE. The simulation results are in good agreement with experiments confirming that generation-recombination effect is the dominant source of dark current at low bias.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical properties; p-i-n photodiodes; 2D simulation; InP-InGaAs-InP; dark current; electrical characteristics; generation-recombination effect; optical characteristics; p-i-n photodiodes; photoresponse; Absorption; Dark current; Doping; Indium gallium arsenide; Indium phosphide; Photodiodes; Semiconductor process modeling;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612442
