DocumentCode :
2710264
Title :
A novel, clustered insulated gate bipolar transistor for high power applications
Author :
Narayanan, E. M Sankara ; Sweet, M.R. ; Luther-King, N. ; Vershinin, K. ; Spulber, O. ; De Souza, M.M. ; Bose, J. V Subhas Chandra
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
173
Abstract :
The aim of this paper is to evaluate the performance a new power semiconductor device called the Clustered Insulated Gate Bipolar Transistor (CIGBT) for high power application. The Clustered IGBT belongs to a new family of MOS controlled power devices with thyristor mode of operation in the on-state and high current saturation characteristics. The excellent saturation characteristics are achieved through a unique `self-clamping´ feature. This feature also enables low loss during switching. The results presented herein focus upon the electrical performance of a 3 kV NPT CIGBT under diode and self-clamped inductive switching, in the first instance. The device is subsequently scaled up to 6.5 kV and 13 kV using a Homogeneous Base (HB) concept. HB concept enables the use of thin silicon layers to achieve superior overall performances. In all cases, the CIGBT is compared to state-of-the-art IGBTs and the significantly superior performance of the CIGBT is clearly demonstrated. Preliminary results of 13 kV presented herein indicate a forward drop of 5.3 V at 100 A/Cm2, which is even lower than forward drop of the 6.5 kV IGBTs
Keywords :
insulated gate bipolar transistors; power semiconductor switches; power transistors; 3 to 13 kV; 5.2 V; CIGBT; Homogeneous Base; MOS controlled power devices; clustered insulated gate bipolar transistor; current saturation characteristics; forward drop; high power applications; inductive switching; self-clamping; thyristor mode; Anodes; Cathodes; Clamps; Equivalent circuits; Immune system; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Power MOSFET; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
Type :
conf
DOI :
10.1109/SMICND.2000.890213
Filename :
890213
Link To Document :
بازگشت