A Novel Product-Level Human Metal Model Characterization Methodology

Author

Sirui Luo ; Salcedo, Javier A. ; Hajjar, Jean-Jacques ; Yuanzhong Zhou ; Liou, Juin J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA

Volume

14

Issue

2

fYear

2014

fDate

Jun-14

Firstpage

772

Lastpage

774

Abstract

A new methodology for characterizing product-level failures due to the human metal model (HMM) stress is proposed and developed. This characterization framework is superior to the conventional leakage current-based approach, and it enables early wafer-level assessment of integrated circuits´ HMM robustness. The new method is demonstrated in two amplifiers and is benchmarked versus the conventional leakage current method and the industry standard system-level IEC gun testing.

Keywords

IEC standards; electrostatic discharge; integrated circuit testing; integrated circuits; leakage currents; wafer level packaging; HMM; human metal model characterization methodology; integrated circuits; leakage current-based approach; product-level failures; system-level IEC gun testing; wafer-level assessment; Electrostatic discharges; Hidden Markov models; Integrated circuits; Leakage currents; Stress; Testing; Voltage measurement; Electrostatic discharges; human metal model; product level characterization;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2014.2311298

Filename

6762978