Title :
Terahertz wire-grid polarizer by nanoimprinting lithography on high resistivity silicon substrate
Author :
Zhang, L. ; Teng, J.H. ; Tanoto, H. ; Yew, S.Y. ; Deng, L.Y. ; Chua, S.J.
Author_Institution :
Adv. Mater. for Micro- & Nano-Syst. Programme, Singapore-MIT Alliance, Singapore, Singapore
Abstract :
Terahertz wire-grid polarizer with 500 nm grating period on high resistivity silicon (100) is fabricated using nanoimprinting lithography (NIL). Preliminary results show a good polarization characteristic ranging from 0.5 to 5 THz. The method is high throughput and low cost.
Keywords :
electromagnetic wave polarisation; elemental semiconductors; nanolithography; silicon; soft lithography; substrates; Si; frequency 0.5 THz to 5 THz; nanoimprinting lithography; polarization characteristics; silicon substrate; terahertz wire-grid polarizer; Conductivity; Extinction ratio; Gratings; Insertion loss; Silicon; Substrates; Wire;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612488
