Title :
Epitaxially grown 1.06 μm and eye safe microchip lasers
Author :
Kopczynski, Krzystof ; Sarnecki, Jerzy ; Mlynczak, Jaroslaw ; Mierczyk, Zygmunt ; Skwarcz, Jerzy
Author_Institution :
Inst. of Optoelectron., Mil. Univ. of Technol., Warsaw, Poland
Abstract :
Most of works on passively Q-switched microchip lasers emitting at 1064 nm have been done with neodymium-doped YAG crystals as gain material and Cr4+:YAG as saturable absorber. The bulk Cr4+:GGG Czochralski grown passive Q-switches were also investigated. We have used a technique of liquid phase epitaxy (LPE) to grow Cr4+:YAG, Cr4+:GGG and Co2+:YAG thin films of saturable absorber. X-ray diffraction analysis, optical transmission spectra measurements and passive Q-switching experiments were performed to characterize the obtained layers. Absorption saturation measurements of Cr4+:YAG, Cr4+:GGG and Co2+:YAG layers were carried out at 1.06 μm and 1.54 μm, respectively.
Keywords :
Q-switching; X-ray diffraction; chromium; cobalt; crystal growth from melt; crystal structure; gadolinium compounds; liquid phase epitaxial growth; microchip lasers; neodymium; optical saturable absorption; 1.06 micron; 1.54 micron; 1064 nm; Czochralski grown Q-switch; GdGG:Cr4+; GdGa5O12:Cr; X-ray diffraction analysis; YAG:Co2+; YAG:Cr4+; YAG:Nd; YAl5O12:Co; YAl5O12:Cr; YAl5O12:Nd; epitaxially grown microchip laser; eye safe microchip laser; gain material; liquid phase epitaxy; neodymium-doped YAG crystal; optical transmission spectra; passively Q-switched microchip laser; saturable absorber thin film; Chromium; Crystalline materials; Crystals; Epitaxial growth; Microchip lasers; Optical diffraction; Optical materials; Performance analysis; Transistors; X-ray diffraction;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2005. Proceedings of CAOL 2005. Second International Conference on
Print_ISBN :
0-7803-9130-6
DOI :
10.1109/CAOL.2005.1553845
