Title :
AlGaN/GaN HFETs on Si Substrates for WiMAX Applications
Author :
Therrien, R. ; Singhal, S. ; Chaudhari, A. ; Nagy, W. ; Marquart, J. ; Johnson, J.W. ; Hanson, A.W. ; Riddle, J. ; Rajagopal, P. ; Preskenis, B. ; Zhitova, O. ; Willamson, J. ; Kizilyalli, I.C. ; Linthicum, K.J.
Author_Institution :
Nitronex Corp., Raleigh, NC
Abstract :
AlGaN/GaN HFETs on Si substrates are tested under OFDM modulations and show excellent performance from 3.3GHz to 3.8GHz. Performance on an 8mm device (NPT35010) in power small outline package (PSOP2) shows 1.5W output power, 11.2dB gain, 28.6% drain efficiency and 2% EVM at 3.5GHz. Large periphery 36mm devices were mounted in ceramic packages (NPT35050) and showed greater than 7W output power, > 11dB gain, 27.2% drain efficiency and 2% EVM at 3.5 GHz. Additionally data was taken across process from 23 devices and 5 process lots to demonstrate repeatability. Finally the same RF data was collected over flange temperature from -40degC to +85degC and demonstrated stable performance over temperature. These results demonstrate the potential for GaN-on-Si HEMTs for use in WiMAX applications
Keywords :
III-V semiconductors; OFDM modulation; WiMax; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; -40 to 85 C; 11 dB; 11.2 dB; 3.5 GHz; 36 mm; 8 mm; AlGaN-GaN; HFET; NPT35010; NPT35050; OFDM modulations; PSOP2; RF power transistors; WiMAX applications; ceramic package; high electron mobility transistors; power small outline package; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; OFDM modulation; Packaging; Power generation; Temperature; Testing; WiMAX; AlGaN/GaN HFETs; GaN high electron mobility transistors (HEMTs); RF power transistors; linearity;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249732
