Title :
A 20-mW G-band Monolithic Driver Amplifier Using 0.07-μm InP HEMT
Author :
Huang, P. ; Lai, R. ; Grundbacher, R. ; Gorospe, B.
Author_Institution :
Northrop Grumman, Redondo Beach, CA
Abstract :
In this paper, a four-stage driver amplifier MMIC covering 160 GHz to 195 GHz is reported. The amplifier uses 0.07-mum T-gate pseudomorphic InGaAs/InAlAs/InP HEMTs with 2-mil substrate thickness. With two MMICs cascaded in WR-5 housing, the assembly exhibits 25-40 dB linear gain from 160 GHz to 195 GHz. When biased at 1.2V, 10-mW saturated output power and 6.5% power-added-efficiency are achieved. 20-mW saturated output power is obtained when 2V drain voltage is applied. The performance of the reported driver amplifier represents state-of-the-art power performance achieved at G-band
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; 0.07 micron; 1.2 V; 10 mW; 160 to 195 GHz; 2 V; 2 mil; 20 mW; 25 to 40 dB; 6.5 percent; InGaAs-InAlAs-InP; MMIC driver amplifier; WR-5 housing; millimeter wave amplifiers; pseudomorphic HEMT; state-of-the-art power performance; Assembly; Driver circuits; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; Power amplifiers; Power generation; HEMT; InP; MMIC amplifier; millimeter wave amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249795
