Title :
Simultaneous determination of threshold voltage, mobility, and parasitic resistance for short-channel MOSFETs
Author :
Mita, Yoshio ; Fujishima, Minoru ; Hoh, Koichiro
Author_Institution :
Univ. of Tokyo, Japan
Abstract :
A novel method of simultaneous extraction of mobility, threshold voltage, and source/drain parasitic resistance are presented. It takes parasitic resistance into account and effective on short-channel MOSFETs. In addition to the effectiveness, it is quite simple and easy method to handle because it is based on well known multi-variable least squares method. Curves calculated by using these parameters were compared with the measured ones for MOSFETs with channel length down to 0.25 μm and the excellent agreement was obtained
Keywords :
MOSFET; carrier mobility; least squares approximations; 0.25 micron; mobility; multi-variable least squares method; parameter extraction; parasitic resistance; short-channel MOSFET; threshold voltage; Circuits; Current measurement; Data mining; Equations; Least squares methods; MOSFETs; Process control; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535633
