Title :
Optical Properties of Semiconductor Quantum Dots
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
Abstract :
An important step towards realizing the advantages of quantum dots in electro-optic applications is to understand the excitation dependences of optical properties. This paper discusses results obtained using a microscopic theory. The calculations uncovered complicated carrier density and electronic structure influences on absorption, gain and refractive index that can be attributed to a delicate balancing of electronic-structure and many-body effects in a coupled quantum-dot-quantum-well system.
Keywords :
III-V semiconductors; band structure; carrier density; electro-optical effects; gallium arsenide; indium compounds; refractive index; semiconductor quantum dots; semiconductor quantum wells; GaAs; InGaAs; absorption spectra; carrier density; coupled quantum-dot-quantum-well system; electro-optic applications; electronic structure; gain calculations; many-body effects; microscopic theory; refractive index; semiconductor quantum dots; Absorption; Charge carrier density; Equations; Optical microscopy; Optical refraction; Optical scattering; Optical variables control; Particle scattering; Quantum dots; Refractive index;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781320
