Title :
AlGaAs/InGaAs/GaAs heterostructures based pHEMT
Author :
Maleev, N.A. ; Zhukov, A.E. ; Kovsh, A.P. ; Ustinov, V.M. ; Khitko, V.I. ; Shulenkov, A.S.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Abstract :
The results of developing a pHEMT on AlGaAs/InGaAs heterostructures grown on a GaAs substrate are presented. The structures have electron mobility of 6400 cm2/(V·s) and surface electron density of 1.2×1012 cm-2 at room temperature. Using these structures, transistors with a 0.6-0.8 dB noise factor providing amplification above 11 dB have been developed.
Keywords :
III-V semiconductors; aluminium compounds; electron density; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device measurement; semiconductor device noise; 0.6 to 0.8 dB; 20 C; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs heterostructure based pHEMT; GaAs; GaAs substrate; amplification; electron mobility; noise factor; surface electron density; Coordinate measuring machines; Gallium arsenide; Gold; HEMTs; Helium; Indium gallium arsenide; Indium phosphide; Microwave technology; Organizing; PHEMTs;
Conference_Titel :
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN :
966-7968-12-X
DOI :
10.1109/CRMICO.2002.1137186
