Title :
INSBN Junction Diode Fabricated by Ion Implantation
Author :
Chen, X.Z. ; Wang, Y. ; Zhang, D.H. ; Liu, W. ; Li, J.H.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
InSbN photodiodes prepared by N+ and Mg+ implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. Such devices are capable of mid- and long-wavelength infrared photodetection and potential candidates for terahertz radiation.
Keywords :
III-V semiconductors; indium compounds; infrared detectors; ion implantation; magnesium; photodetectors; photodiodes; InSbN:Mg; ion implantation; junction diode; long wavelength infrared photodetection; nitrogen; photodiodes; terahertz radiation; Bonding; Diodes; Infrared detectors; Ion implantation; Monitoring; Nitrogen; P-n junctions; Photodiodes; Photonic band gap; Wavelength measurement;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781370
