Spatial distribution of recombination centers in electron irradiated silicon epitaxial layers

Author

Daliento, Santolo ; Sanseverino, Annunziata ; Spirito, Paolo ; Zeni, Luigi

Author_Institution

Dipartimento di Ingegneria Elettronica, Naples Univ., Italy

fYear

1996

fDate

25-28 Mar 1996

Firstpage

163

Lastpage

165

Abstract

Taking advantage of a suitable three terminals test structure, we analyze the effects of electron irradiation in silicon epitaxial layers, through the measurement of the recombination lifetime profile. Furthermore, by means of an appropriate temperature scanning we measure the energy levels of the recombination centers induced by the irradiation itself

Keywords

carrier lifetime; electric variables measurement; electron beam effects; electron-hole recombination; elemental semiconductors; minority carriers; semiconductor device testing; semiconductor epitaxial layers; silicon; Si; Si epitaxial layers; electron irradiated Si; energy levels; recombination centers; recombination lifetime profile; spatial distribution; temperature scanning; three terminals test structure; Electrons; Energy measurement; Life testing; Radiative recombination; Semiconductor device measurement; Semiconductor device testing; Semiconductor diodes; Semiconductor epitaxial layers; Spontaneous emission; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on

Conference_Location

Trento

Print_ISBN

0-7803-2783-7

Type

conf

DOI

10.1109/ICMTS.1996.535639

Filename

535639