DocumentCode :
2713749
Title :
A 10V neuron stimulator in 0.18µm CMOS process with voltage clothing and folding voltage techniques
Author :
Lin, Lee-Ying ; Chen, Chien-Chih ; Tang, Kea-Tiong
fYear :
2011
fDate :
3-5 Nov. 2011
Firstpage :
13
Lastpage :
16
Abstract :
Biomedical implantable devices have drawn more and more attention in recent years. Extensive studies in neuroscience prove that neural stimulation techniques may cure or at least improve some diseases caused by neural abnormal discharge or disability. Two of the major challenges of implantable devices are combining a high-voltage driver and low-voltage digital control in a single chip, and accommodating large voltages in smaller feature size technology. This paper presents a new stimulator circuit structure to address these problems, using a novel folded voltage design to reduce the voltage supply from 20V to 10V, and a new floating voltage technique to solve the reliability issue. The proposed design has been fabricated and tested with TSMC 0.18μm 1P6M CMOS technology. 8000μA output current was delivered.
Keywords :
CMOS integrated circuits; bioelectric potentials; diseases; neurophysiology; patient treatment; prosthetics; reliability; TSMC 1P6M CMOS; biomedical implantable devices; current 800 muA; diseases; floating voltage technique; folding voltage techniques; high-voltage driver; low-voltage digital control; neural abnormal discharge; neural disability; neural stimulation; neuron stimulator; neuroscience; reliability; size 0.18 mum; voltage 10 V; voltage 20 V; voltage clothing technique; CMOS process; Electrodes; Logic gates; Mirrors; Neurons; Transistors; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bioelectronics and Bioinformatics (ISBB), 2011 International Symposium on
Conference_Location :
Suzhou
Print_ISBN :
978-1-4577-0076-7
Type :
conf
DOI :
10.1109/ISBB.2011.6107633
Filename :
6107633
Link To Document :
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