Title :
A 6 to 16 GHz Linearized GaN Power Amplifier
Author :
Katz, Allen ; Kubak, Michael ; DeSalvo, Gregory
Author_Institution :
New Jersey Coll., Ewing, NJ
Abstract :
This paper discusses a predistortion linearizer developed for use with multi-octave high power GaN amplifiers. This linearizer was produced as a GaN MMIC and displays useful characteristics over a frequency range from less than 4 GHz to greater than 20 GHz. It achieved more than an 8 dB improvement in C/I across the frequency range from 6 to 16 GHz with a 10 watt broadband MMIC GaN power amplifier. The authors believe this linearizer to be the first linearizer produced in GaN and also the widest band linearizer reported to date
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; wideband amplifiers; 6 to 16 GHz; GaN; MMIC amplifier; broadband power amplifier; predistortion linearizer; Broadband amplifiers; Frequency; Gallium nitride; Harmonic distortion; High power amplifiers; Intermodulation distortion; MMICs; Microwave amplifiers; Power amplifiers; Radiofrequency amplifiers; Amplifier distortion; MMIC power amplifiers; harmonic distortion; intermodulation distortion; microwave amplifiers; power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249503
