Title :
Microwave frequency measurements and modeling of MOSFETs on low resistivity silicon substrates
Author :
Biber, Charlotte ; Morf, Thomas ; Benedickter, Hansruedi ; Lott, Urs ; Bachtold, Werner
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
Microwave frequency performance of silicon MOSFETs depends not only on the process but also on gate resistance and parasitic capacitances which are layout dependent. MOSFET transistors with different finger widths on a silicon epi-wafer have been measured from 50 MHz to 10 GHz. An equivalent circuit model of an optimum transistor layout for high frequency performance up to 10 GHz is presented
Keywords :
MOSFET; S-parameters; elemental semiconductors; equivalent circuits; microwave field effect transistors; microwave measurement; semiconductor device models; semiconductor device testing; sensitivity analysis; silicon; substrates; 50 MHz to 10 GHz; MOSFETs; SHF; Si; equivalent circuit model; finger widths; gate resistance; low resistivity Si substrates; microwave frequency measurements; modeling; optimum transistor layout; parasitic capacitances; Electrical resistance measurement; Equivalent circuits; Fingers; Frequency measurement; MOSFETs; Microwave frequencies; Microwave measurements; Microwave transistors; Parasitic capacitance; Silicon;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535648
