DocumentCode :
2715317
Title :
Subthreshold Leakage Due to 1/F Noise and Rts(Random Telegraph Signals)
Author :
Miller, Drake A. ; Poocharoen, Panupat ; Forbes, Leonard
Author_Institution :
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501, (541) 753-1409, prof@forbes4.com
fYear :
2007
fDate :
20-20 April 2007
Firstpage :
23
Lastpage :
24
Abstract :
An analysis of subthreshold leakage predicts a Gaussian or Normal distribution on large devices but a distorted distribution is possible on small devices. 1/f noise due to RTS signals on large well behaved devices will have a Gaussian distribution and cause a Gaussian current distribution under normal and subthreshold operating conditions. Localized channels or percolation channels can cause a distortion of this distribution and large subthreshold leakage current pulses which are most obvious in small devices.
Keywords :
Computer science; Current distribution; Electron traps; Frequency domain analysis; Gaussian distribution; Gaussian noise; Signal analysis; Subthreshold current; Telegraphy; Threshold voltage; leakage current; memory retention time; subthreshold current; subthreshold models;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electron Devices, 2007. WMED 2007. IEEE Workshop on
Conference_Location :
Boise, ID, USA
Print_ISBN :
1-4244-1114-9
Electronic_ISBN :
1-4244-1114-9
Type :
conf
DOI :
10.1109/WMED.2007.368840
Filename :
4218991
Link To Document :
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