Title :
Quantum wire FET simulation
Author :
Kvyatkevich, I.I. ; Obukhov, I.A.
Author_Institution :
Interface Ltd., Moscow, Russia
Abstract :
Presented in this paper are results of Quantum Wire Field Effect Transistor (QWFET) simulation. The influence of contact materials and dimensions on transistor characteristics is described.
Keywords :
field effect transistors; quantum wires; contact material; numerical simulation; quantum wire field effect transistor; Current density; Effective mass; Electrons; Helium; IEEE catalog; Microwave FETs; Microwave technology; Organizing; Wire; Zinc;
Conference_Titel :
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN :
966-7968-12-X
DOI :
10.1109/CRMICO.2002.1137313
