Intracavity-contacted VCSELs using asymmetric oxidation for high-speed optical interconnects

Author

Song, Y.M. ; Na, B.H. ; Chang, K.S. ; Lee, Y.T.

Author_Institution

Dept. of Inf. & Commun., Gwangju Insititute of Sci. & Technol., Gwangju, South Korea

fYear

2008

fDate

8-11 Dec. 2008

Firstpage

1

Lastpage

3

Abstract

980 nm intracavity-contacted oxide-aperture vertical-cavity surface-emitting lasers (VCSELs) with high modulation bandwidth up to 11 GHz have been demonstrated. Asymmetric oxidation was used for reduction of parasitic capacitance and for relaxation of current crowding at oxide aperture rim. The modulation current efficiency factor (MCEF) of 5.6 GHz/mA^1/2 was also achieved.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; optical interconnections; semiconductor lasers; surface emitting lasers; GaAs-AlGaAs; asymmetric oxidation; bandwidth 11 GHz; current crowding; high-speed optical interconnects; intracavity-contacted oxide-aperture VCSEL; modulation current efficiency factor; parasitic capacitance; vertical-cavity surface-emitting lasers; wavelength 980 nm; Apertures; Bandwidth; Distributed Bragg reflectors; Epitaxial layers; Gallium arsenide; Optical interconnections; Oxidation; Parasitic capacitance; Shape; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE

Conference_Location

Singapore

Print_ISBN

978-1-4244-3901-0

Electronic_ISBN

978-1-4244-2906-6

Type

conf

DOI

10.1109/IPGC.2008.4781486

Filename

4781486