Title :
Numeric computation of proofness of inhomogeneous microstructure elements at the influence of power electromagnetic field [IC degradation]
Author :
Starostenko, V.V. ; Rukavishnikov, A.V.
Author_Institution :
Tavrical Nat. Univ., Simferopol, Russia
Abstract :
A procedure for the numerical calculation of the development of degradation processes in microstructure elements of integrated circuits by the action of electromagnetic fields is presented. The influence of conductive microstructure inhomogeneity parameters upon a threshold value of the electric intensity of an impinging electromagnetic wave is detected.
Keywords :
electromagnetic fields; inhomogeneous media; integrated circuit modelling; integrated circuit reliability; radiation effects; IC inhomogeneous microstructure element degradation processes; conductive microstructure inhomogeneity parameters; impinging electromagnetic wave electric intensity threshold values; nonuniform metal-dielectric structures; powerful electromagnetic field effects; Degradation; Dielectrics; Electromagnetic diffraction; Electromagnetic fields; Electromagnetic modeling; Electrothermal effects; Integrated circuit modeling; Microstructure; Microwave technology; Nonuniform electric fields;
Conference_Titel :
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN :
966-7968-12-X
DOI :
10.1109/CRMICO.2002.1137327
