Title :
771mV, 173nA, 90nm CMOS resistorless trimmable voltage reference
Author :
Samir, A. ; Girardeau, L. ; Bert, Y. ; Kussener, E. ; Rahajandraibe, W. ; Barthélemy, H.
Author_Institution :
STMicroelectronics, Z.I. Rousset-Peynier, Rousset, France
Abstract :
A low power voltage reference generator operating with a supply voltage ranging from 1.6 V to 3.6 V has been implemented in a 90-nm standard CMOS process. The reference is based on MOSFETs biased in the weak inversion region to consume nanowatts of power and uses no resistors. The maximum supply current at 3.6 V and at 125°C is 173 nA. It provides an 771 mV voltage reference. A temperature coefficient of 7.5 ppm/°C is achieved at best and 39.5 ppm/°C on average, in a range from -40 to 125°C, as the combined effect of a suppression of the temperature dependence of mobility and the compensation of the threshold voltage temperature variation. The total block area is 0.03 mm2.
Keywords :
CMOS integrated circuits; low-power electronics; voltage regulators; CMOS resistorless trimmable voltage reference; MOSFET; current 173 nA; low power voltage reference generator; size 90 nm; temperature 125 degC to -40 degC; temperature dependent mobility; threshold voltage temperature variation; voltage 1.6 V to 3.6 V; voltage 771 mV; CMOS integrated circuits; MOSFETs; Temperature dependence; Temperature distribution; Temperature measurement; Threshold voltage; Voltage measurement;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2011 IEEE 9th International
Conference_Location :
Bordeaux
Print_ISBN :
978-1-61284-135-9
DOI :
10.1109/NEWCAS.2011.5981265
