DocumentCode
271691
Title
Analysis of different models of iron precipitation in multicrystalline silicon
Author
Morishige, Ashley E. ; Laine, Hannu S. ; Schön, Jonas ; Hofstetter, Jasmin ; Haarahiltunen, A. ; Schubert, Martin C. ; Savin, H. ; Buonassisi, Tonio
Author_Institution
Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2014
fDate
8-13 June 2014
Firstpage
3008
Lastpage
3010
Abstract
Simulation of solar cell processing enables inexpensive and rapid process optimization. Over the last twenty years, several models describing the distribution and behavior of iron point defects and iron-silicide precipitates have been developed and incorporated into process simulations. The goal of this work is to elucidate what physics are needed to accurately describe industry-relevant as-grown impurity and defect distributions and processing conditions by simulating different material-processing combinations with each model. This rigorous comparison helps scientists and engineers choose the appropriate level of model complexity, and consequently simulation run time, based on material characteristics and processing conditions.
Keywords
elemental semiconductors; iron; optimisation; silicon; solar cells; Fe; Si; defect distributions; iron point defects; iron precipitation; iron-silicide precipitates; material-processing combinations; multicrystalline silicon; rapid process optimization; solar cell processing; Crystallization; Gettering; Iron; Predictive models; Semiconductor device modeling; Semiconductor process modeling; TCAD; gettering; iron; modeling; phosphorus; photovoltaics; precipitates; silicon; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/PVSC.2014.6925566
Filename
6925566
Link To Document