• DocumentCode
    271691
  • Title

    Analysis of different models of iron precipitation in multicrystalline silicon

  • Author

    Morishige, Ashley E. ; Laine, Hannu S. ; Schön, Jonas ; Hofstetter, Jasmin ; Haarahiltunen, A. ; Schubert, Martin C. ; Savin, H. ; Buonassisi, Tonio

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    3008
  • Lastpage
    3010
  • Abstract
    Simulation of solar cell processing enables inexpensive and rapid process optimization. Over the last twenty years, several models describing the distribution and behavior of iron point defects and iron-silicide precipitates have been developed and incorporated into process simulations. The goal of this work is to elucidate what physics are needed to accurately describe industry-relevant as-grown impurity and defect distributions and processing conditions by simulating different material-processing combinations with each model. This rigorous comparison helps scientists and engineers choose the appropriate level of model complexity, and consequently simulation run time, based on material characteristics and processing conditions.
  • Keywords
    elemental semiconductors; iron; optimisation; silicon; solar cells; Fe; Si; defect distributions; iron point defects; iron precipitation; iron-silicide precipitates; material-processing combinations; multicrystalline silicon; rapid process optimization; solar cell processing; Crystallization; Gettering; Iron; Predictive models; Semiconductor device modeling; Semiconductor process modeling; TCAD; gettering; iron; modeling; phosphorus; photovoltaics; precipitates; silicon; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6925566
  • Filename
    6925566