A new serial sensing approach for multistorage non-volatile memories

Author

Calligaro, Cristiano ; Daniele, Vincenzo ; Gastaldi, Roberto ; Manstretta, Alessandro ; Torelli, Guido

Author_Institution

Dipartimento di Elettronica, Pavia Univ., Italy

fYear

1995

fDate

7-8 Aug 1995

Firstpage

21

Lastpage

26

Abstract

This paper presents a novel serial sensing method for multistorage non-volatile memories. The method is based on a dichotomic algorithm to detect the level stored in the memory cell selected. While maintaining the main advantage of the serial approach (the use of a single sense amplifier), the method proposed also reduces to a minimum the overall time needed to read the cell content. Sensing time is independent of the memory cell content

Keywords

EPROM; MOSFET circuits; amplifiers; electric sensing devices; random-access storage; dichotomic algorithm; memory cell content reading time; multistorage nonvolatile memories; sense amplifier; sensing time; serial sensing approach; stored level detection; Application specific integrated circuits; Consumer electronics; EPROM; Electrons; Energy consumption; Microelectronics; Nonvolatile memory; Power supplies; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Technology, Design and Testing, 1995., Records of the 1995 IEEE International Workshop on

Conference_Location

San Jose, CA

Print_ISBN

0-8186-7102-5

Type

conf

DOI

10.1109/MTDT.1995.518077

Filename

518077