Title :
A terahertz light emitter of a semiconductor-multilayer coupled cavity by frequency-mixing-signal generation
Author :
Isu, Toshiro ; Fumiya, T. ; Toshikazu, T. ; Ken, M. ; Kitada, Takahiro
Author_Institution :
Univ. of Tokushima, Tokushima, Japan
Abstract :
A coupled-cavity structure for terahertz light emitting devices is proposed. Strong frequency-mixing signal of the two cavity modes of the multilayer coupled-cavity on a (113)B GaAs substrate was observed. We found that an asymmetric structure was essential to emit a difference frequency light by a simulation of the optical field in the cavity.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; integrated optics; optical frequency conversion; optical multilayers; terahertz wave generation; (113)B GaAs substrate; DBR layers; GaAs-AlAs; cavity modes; difference frequency light; frequency-mixing-signal generation; optical field; semiconductor-multilayer coupled cavity; terahertz light emitting devices; Cavity resonators; Electric fields; Gallium arsenide; Nonlinear optics; Optical coupling; Optical pulses; Optical reflection;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612945
