• DocumentCode
    2719554
  • Title

    Terahertz responsivity enhancement of silicon CMOS transistor-based detectors using a current bias

  • Author

    Boppel, S. ; Lisauskas, A. ; Voltolina, F. ; Bolívar, P. Haring ; Roskos, H.G.

  • Author_Institution
    Phys. Inst., Johann Wolfgang Goethe-Univ. Frankfurt, Frankfurt am Main, Germany
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    We report on a responsivity enhancement of silicon CMOS transistor-based detectors for terahertz radiation by the application of a source-to-drain bias current.
  • Keywords
    CMOS integrated circuits; microwave integrated circuits; terahertz wave detectors; silicon CMOS transistor; source-to-drain bias current; terahertz detector; terahertz responsivity enhancement; CMOS integrated circuits; Detectors; HEMTs; Imaging; Logic gates; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612994
  • Filename
    5612994
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2719554