Title :
Detection of high power THz radiation by GaAs High Electron Mobility and Si Field Effect Transistors
Author :
Drexler, C. ; Dyakonova, N. ; Schafberger, M. ; Karpierz, K. ; Karch, J. ; Videlier, H. ; Meziani, Y. ; Olbrich, P. ; Knap, W. ; Ganichev, S.
Author_Institution :
Terahertz Center, Univ. of Regensburg, Regensburg, Germany
Abstract :
We report on the observation of photocurrents in GaAs High Electron Mobility and Si Field Effect Transistors. We show that illuminating the samples with high power terahertz laser radiation causes electric currents. These currents are driven by plasmonic effects in two dimensional electron gases.
Keywords :
III-V semiconductors; electron gas; elemental semiconductors; gallium arsenide; high electron mobility transistors; photoconducting devices; plasmonics; silicon; terahertz wave detectors; GaAs; Si; field effect transistor; high electron mobility transistor; photocurrents; plasmonic effects; terahertz radiation detection; two dimensional electron gas; FETs; Gallium arsenide; Laser excitation; Logic gates; Power lasers; Pump lasers;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5613001
