Title :
A short channel charge LDD-MOSFET model for analog and digital circuits with low overdrive voltage
Author :
Klein, P. ; Hoffmann, K. ; Lemaitre, B.
Author_Institution :
Bundeswehr Munich Univ., Neubiberg, Germany
Abstract :
A charge LDD-MOSFET model, based on an analytical surface potential formulation at source and drain, for all channel lengths down to deep submicron has been derived and implemented in the circuit simulator SABER. In contrast to all hitherto developed models, this model takes the geometrical dependence of threshold voltage caused by the space charge regions at source and drain (SC-effect) into account. Named effect increases considerably in significance with further downscaling and decreasing supply voltage
Keywords :
CMOS integrated circuits; MOSFET; capacitance; circuit analysis computing; semiconductor device models; space charge; surface potential; SABER; analytical surface potential formulation; channel lengths; charge LDD-MOSFET model; circuit simulator; downscaling; geometrical dependence; overdrive voltage; space charge regions; supply voltage; threshold voltage; CMOS technology; Capacitance; Capacitance-voltage characteristics; Channel bank filters; Circuit simulation; Digital circuits; Low voltage; MOSFETs; Solid modeling; Threshold voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1995., Proceedings of the IEEE 1995
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-2584-2
DOI :
10.1109/CICC.1995.518174
