Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon

Author

Liu, Alan Y. ; Herrick, Robert W. ; Ueda, Osamu ; Petroff, Pierre M. ; Gossard, Arthur C. ; Bowers, John E.

Author_Institution

Univ. of California at Santa Barbara, Santa Barbara, CA, USA

Volume

21

Issue

6

fYear

2015

fDate

Nov.-Dec. 2015

Firstpage

1

Lastpage

8

Abstract

We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially grown on Ge/Si substrates. Some devices maintain lasing oscillation after more than 2700 h of constant current stress at 30 °C, longer than any previous life tests of GaAs lasers epitaxially grown on silicon. No catastrophic failures were observed. The lasers were characterized to gain insight on the aging mechanism.

Keywords

III-V semiconductors; ageing; gallium arsenide; indium compounds; oscillations; quantum dot lasers; semiconductor device reliability; Ge-Si; InAs-GaAs; Si; aging mechanism; constant current stress; lasing oscillation; reliability; self-assembled quantum dot lasers; temperature 30 degC; Aging; Gallium arsenide; Quantum dot lasers; Reliability; Silicon; Quantum dot lasers; semiconductor device reliability; semiconductor lasers; transmission electron microscopy;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2015.2418226

Filename

7085993