Title :
High-frequency measurements of TSV failures
Author :
Kim, Joohee ; Jung, Daniel ; Cho, Jonghyun ; Pak, Jun So ; Yook, Jong Min ; Kim, Jun Chul ; Kim, Joungho
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fDate :
May 29 2012-June 1 2012
Abstract :
Due to a lot of thermal and mechanical loads during TSV process or post TSV process such as metallization and die stacking, disconnection failure can occur which results in 3D IC yield loss. Thus, a non-destructive diagnostic method by using one point probing for TSV failures is proposed to detect and differentiate TSV failure types and locations. With the fabricated test vehicles with disconnection failures, high-frequency measurements are conducted to verify the proposed diagnostic method, and full and partial disconnection failure is analyzed based on the high-frequency measurement results.
Keywords :
failure analysis; integrated circuit interconnections; integrated circuit measurement; integrated circuit reliability; integrated circuit yield; 3D IC yield loss; TSV failures; die stacking; high frequency measurements; mechanical loads; nondestructive diagnostic method; one point probing; partial disconnection failure; thermal loads; through-silicon-vias; Analytical models; Capacitance; Integrated circuit modeling; Metals; Through-silicon vias; Transmission line measurements;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2012.6248845