Title :
A New Read Method by Using DIBL Characteristics in Nitride Storage Device
Author :
Chiang, L.P. ; Chen, P.A. ; Hung, C.H. ; Tsao, C.P. ; Liao, H.H. ; Lin, C.H.
Author_Institution :
NVM Div., Winbond Electron. Corp., Hsinchu
Abstract :
A new read operation scheme by using the differential of the threshold voltage (or current) is proposed in nitride storage memory devices. By utilizing the DIBL characteristics between program state and erase state, the principle and application of this cell read operation either in single bit or in two bits is demonstrated. Finally, the application for multi-level operation is proposed
Keywords :
semiconductor storage; DIBL characteristics; erase state; nitride storage device; nitride storage memory devices; program state; read operation scheme; threshold current; threshold voltage; Charge carrier processes; Costs; Degradation; Electron traps; Hot carriers; Manufacturing; Nonvolatile memory; Split gate flash memory cells; Tellurium; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251058
