Title :
Writing Architecture for Magnetic Random Access Memory with Negative Pulse Writing Scheme
Author :
Chang, C.P. ; Hung, C.C. ; Wang, Y.H. ; Lee, Y.J. ; Su, K.L. ; Chen, W.C. ; Chen, Y.H. ; Lin, C.S. ; Kao, M.J. ; Huang, J.F. ; Tsai, M.J.
Author_Institution :
Electron. Res. & Service Organ. (ERSO), ITRI, Hsinchu
Abstract :
The toggle cell of MRAM needs large current for writing. In this work, the negative pulse scheme for toggle writing is proposed, and the implemented architecture is also described. The scheme can reduce the writing current and improve the toggle yield. A single current source scheme is also designed to provide the symmetrical and bi-directional current
Keywords :
magnetic storage; memory architecture; random-access storage; MRAM; bidirectional current; magnetic random access memory; negative pulse writing scheme; single current source scheme; symmetrical current; toggle cells; toggle writing; writing architecture; Bidirectional control; Circuits; Energy consumption; Lithography; Low voltage; Pulse generation; Random access memory; Routing; Switches; Writing;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251059
