Title :
Stack DRAM Technologies for the Future
Author :
Park, Donggun ; Lee, Wonshick ; Ryu, Byung-Il
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Gyeonggi-Do
Abstract :
Newly developed stack DRAM technologies such as RCAT, FinFET, MIM capacitor, improved support transistors, and litho-friendly patterning are introduced. Using these technologies, we expect that the scaling of DRAM can be continuously achieved until 2010
Keywords :
DRAM chips; MIM devices; MOSFET; capacitors; lithography; FinFET; MIM capacitor; RCAT; litho-friendly patterning; stack DRAM technologies; support transistors; Capacitance; Contact resistance; FinFETs; High K dielectric materials; Immune system; MIM capacitors; MOSFETs; Random access memory; Threshold voltage; Transistors;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251083
