Title :
Relationship of HfO2 Material Properties and Transistor Performance
Author :
Kirsch, P.D. ; Quevedo, M.A. ; Pant, G. ; Krishnan, Sridhar ; Song, S.C. ; Li, H.J. ; Peterson, J.J. ; Lee, B.H. ; Wallace, R.W. ; Kim, M. ; Gnade, B.E
Author_Institution :
SEMATECH, Austin, TX
Abstract :
We report on the relationship between the materials science of a HfO2/TiN stack and transistor performance. Atomic layer deposited (ALD) HfO2 can be scaled to a physical thickness of 1.2 nm resulting in EOT 1.0 nm. In scaling HfO2 the interfacial SiO2 layer (IL) is also scaled and the extent of HfO2 crystallization is reduced. Reduced HfO2 crystallinity is coincident with reduced threshold voltage instability (10 mV) and increased electron mobility (82% Univ. SiO 2). For these stable, high mobility devices, we find that HfO2 can coordinate N as Hf-N without excessive nitridation of the IL
Keywords :
atomic layer deposition; dielectric materials; hafnium compounds; silicon compounds; titanium compounds; transistors; 1 nm; 10 mV; HfO2-TiN; SiO2; atomic layer; crystallization; electron mobility; high mobility devices; material properties; materials science; nitridation; threshold voltage instability; transistor performance; Annealing; Atomic layer deposition; Crystallization; Dielectrics; Electron mobility; Grain boundaries; Hafnium oxide; Material properties; Threshold voltage; Tin;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251090
