• DocumentCode
    2723641
  • Title

    3D-TSV vertical interconnection method using Cu/SnAg double bumps and B-stage non-conductive adhesives (NCAs)

  • Author

    Choi, Yongwon ; Shin, Jiwon ; Paik, Kyung-Wook

  • Author_Institution
    Dept. of Mater. Sci. & Eng., KAIST, Daejeon, South Korea
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    1077
  • Lastpage
    1080
  • Abstract
    In this study, the chip to chip eutectic solder bonding method using NCAs for TSV stacking was investigated as an alternative 3D-TSV interconnection method. The non-conductive polymer adhesive was applied at TSV wafers as a film format before eutectic solder bonding resulting in no extra underfill process. The electrical interconnections between micro-sized bumps for TSVs of the stacked chips were investigated. The electrical interconnection through the arrays of the bumps between two chips showed no change even after the reliability tests which meant that vertical interconnection by one step metal/polymer hybrid bonding was rapid as well as stable.
  • Keywords
    adhesives; copper; polymers; semiconductor device metallisation; solders; three-dimensional integrated circuits; tin compounds; 3D-TSV vertical interconnection method; B-stage nonconductive polymer adhesive; Cu-SnAg; NCA; double bumps; electrical interconnections; eutectic solder bonding method; microsized bumps; one step metal-polymer hybrid bonding; reliability tests; Bonding; Joints; Stacking; Temperature measurement; Through-silicon vias; Viscosity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248969
  • Filename
    6248969