DocumentCode
2723641
Title
3D-TSV vertical interconnection method using Cu/SnAg double bumps and B-stage non-conductive adhesives (NCAs)
Author
Choi, Yongwon ; Shin, Jiwon ; Paik, Kyung-Wook
Author_Institution
Dept. of Mater. Sci. & Eng., KAIST, Daejeon, South Korea
fYear
2012
fDate
May 29 2012-June 1 2012
Firstpage
1077
Lastpage
1080
Abstract
In this study, the chip to chip eutectic solder bonding method using NCAs for TSV stacking was investigated as an alternative 3D-TSV interconnection method. The non-conductive polymer adhesive was applied at TSV wafers as a film format before eutectic solder bonding resulting in no extra underfill process. The electrical interconnections between micro-sized bumps for TSVs of the stacked chips were investigated. The electrical interconnection through the arrays of the bumps between two chips showed no change even after the reliability tests which meant that vertical interconnection by one step metal/polymer hybrid bonding was rapid as well as stable.
Keywords
adhesives; copper; polymers; semiconductor device metallisation; solders; three-dimensional integrated circuits; tin compounds; 3D-TSV vertical interconnection method; B-stage nonconductive polymer adhesive; Cu-SnAg; NCA; double bumps; electrical interconnections; eutectic solder bonding method; microsized bumps; one step metal-polymer hybrid bonding; reliability tests; Bonding; Joints; Stacking; Temperature measurement; Through-silicon vias; Viscosity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4673-1966-9
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2012.6248969
Filename
6248969
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