DocumentCode
2725751
Title
Detailed analysis of different short-circuit conditions for nonpunch-through IGBTs
Author
Cotorogea, M. ; Claudio, A. ; Aguayo, J.
Author_Institution
Centro Nacional de Inv. y Desarollo Tecnol., Morelos, Mexico
fYear
2000
fDate
2000
Firstpage
263
Lastpage
268
Abstract
NPT-IGBTs are known to be very rugged devices, especially under short-circuit conditions. This paper presents a detailed analysis of the behavior of NPT-IGBTs under three different short circuit cases. The study is based on experimental results obtained with a specially designed test circuit as well as on SPICE simulations performed using a physics based IGBT model
Keywords
SPICE; insulated gate bipolar transistors; semiconductor device models; short-circuit currents; SPICE simulations; nonpunch-through IGBT; physics based IGBT model; rugged devices; short circuit cases; short-circuit conditions; Capacitance; Circuit faults; Circuit simulation; Circuit testing; Inductance; Insulated gate bipolar transistors; Performance analysis; Stress; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Congress, 2000. CIEP 2000. VII IEEE International
Conference_Location
Acapulco
Print_ISBN
0-7803-6489-9
Type
conf
DOI
10.1109/CIEP.2000.891424
Filename
891424
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