An a-SiGe:H,F based thin film MSM high-speed photodetector

In this work we propose and show the initial results of the use of a-SiGe:H as the base material for the development of very fast photodetectors for operating at wavelengths up to 1.55 mum. The device is a thin film device on which a MSM structures was built to form the photodetector. The device was already tested under IR illumination of 940 and 106 nm of wavelength in photovoltaic mode by means of pulsed laser with a 10 nsec duration pulse. The dark current has been measured and is 2.4times10^-8 A at a bias of 3 V. Because the compatibility of the fabrication process with the silicon technology, low dark current and low bias needed for operation, this device is proposed to be integrated with the CMOS circuitry to form the front end of a communication system totally build on silicon or as device for the future inter or intra chip communications