Electrical Simulation Model of the 2T-FLOTOX Core-Cell for Defect Injection and Faulty Behavior Prediction in eFlash Memories

The embedded flash technology can be subject to complex defects creating functional faults. In this paper, we describe the different steps in the electrical modeling of 2T-FLOTOX core-cells for a good understanding of failure mechanisms. First, we present a first order electrical model of 2T-FLOTOX core-cells which is characterized and compared with silicon data measurements based on the ATMEL 0.15 mum eFlash technology. Next, we propose a study of resistive defect injections in eFlash memories to show the relevance of the proposed simulation model. At the end of the paper, a table summarizes the functional fault models for different resistive defect configurations and experimental set-ups. According to these first results and with additional analysis of actual defects presented in [1] we are then able to enhance existing test solutions for eFlash testing.