DocumentCode :
2729190
Title :
Intermetallic Cu3Sn as oxidation barrier for fluxless Cu-Sn bonding
Author :
Liu, H. ; Wang, K. ; Aasmundtveit, K. ; Hoivik, N.
Author_Institution :
Inst. of Microsyst. Technol., Vestfold Univ. Coll., Borre, Norway
fYear :
2010
fDate :
1-4 June 2010
Firstpage :
853
Lastpage :
857
Abstract :
A fluxless Cu/Sn SLID bonding process was demonstrated by using intermetallic Cu3Sn layer as the oxidation barrier for Cu interconnects. Oxidation behavior of intermetallic Cu3Sn was confirmed by aging Cu and multilayer Cu/Cu3Sn films at elevated temperatures in ambient air, and measuring the oxidation level by energy dispersive x-ray microscopy (EDX). The strength of bonded interconnects were characterized by shear testing, and found to be comparable to conventionally SLID bonded interconnects. Furthermore, the interdiffusion process of elemental Cu and Sn in the bonding region is discussed.
Keywords :
Aging; Bonding processes; Dispersion; Energy measurement; Intermetallic; Microscopy; Nonhomogeneous media; Oxidation; Temperature; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location :
Las Vegas, NV, USA
ISSN :
0569-5503
Print_ISBN :
978-1-4244-6410-4
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2010.5490709
Filename :
5490709
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2729190
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