Title :
Non-Volatile Memory Technology-Today and Tomorrow
Author :
Lu, Chih-Yuan ; Lu, Tao-Cheng ; Liu, Rich
Author_Institution :
Macronix Int. Co., Inc., Hsinchu
Abstract :
Despite strong scaling limitations for both NOR and NAND flash memories, solutions to continue the Moore´s law are also emerging. For NOR flash memory, 2-bit/cell NROM, BE-SONOS and phase-change chalcogenide memory show promise to scale below 35nm node. For NAND flash memory, new nitride storage devices such as TANOS and BE-SONOS are candidates for < 30 nm devices
Keywords :
flash memories; random-access storage; 2-bit/cell NROM; BE-SONOS; Moore law; NAND flash memory; NOR flash memory; TANOS; nonvolatile memory technology; phase-change chalcogenide memory; Biological information theory; Electrons; Explosives; Flash memory; Insulation; MOSFET circuits; Nonvolatile memory; Random access memory; Space technology; Tunneling;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.250989
