DocumentCode
2729258
Title
Characterization of encapsulants for high-voltage, high-temperature power electronic packaging
Author
Yao, Yiying ; Chen, Zheng ; Lu, Guo-Quan ; Boroyevich, Dushan ; Ngo, Khai D T
Author_Institution
Dept. of Mater. Sci. & Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear
2010
fDate
1-4 June 2010
Firstpage
1834
Lastpage
1840
Abstract
Seven encapsulants with operating temperature up to 250°C have been surveyed for possible use in high-temperature, high-power planar packages. Processability was assessed by studying the flow fronts and the cured properties of the surveyed materials between paralleled plates. Two encapsulants did not pass the flow test, and another two did not pass the curing test. Material E, F, and G were confirmed to be comparably stable with respect to temperature, and both dielectric strength and dielectric permittivity decreased around 40% and 30%, respectively, as the temperature increased from 25°C to 250°C. The thermal aging test showed that materials were hardened during the aging process, and cracking started in the material matrix. The dielectric strength of the sample would significantly drop to only around 10 kV/mm once cracking occurred.
Keywords
Aging; Curing; Dielectric breakdown; Dielectric materials; Electronics packaging; Materials testing; Permittivity; Power electronics; Temperature; Transmission line matrix methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490712
Filename
5490712
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