• DocumentCode
    2729258
  • Title

    Characterization of encapsulants for high-voltage, high-temperature power electronic packaging

  • Author

    Yao, Yiying ; Chen, Zheng ; Lu, Guo-Quan ; Boroyevich, Dushan ; Ngo, Khai D T

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • fYear
    2010
  • fDate
    1-4 June 2010
  • Firstpage
    1834
  • Lastpage
    1840
  • Abstract
    Seven encapsulants with operating temperature up to 250°C have been surveyed for possible use in high-temperature, high-power planar packages. Processability was assessed by studying the flow fronts and the cured properties of the surveyed materials between paralleled plates. Two encapsulants did not pass the flow test, and another two did not pass the curing test. Material E, F, and G were confirmed to be comparably stable with respect to temperature, and both dielectric strength and dielectric permittivity decreased around 40% and 30%, respectively, as the temperature increased from 25°C to 250°C. The thermal aging test showed that materials were hardened during the aging process, and cracking started in the material matrix. The dielectric strength of the sample would significantly drop to only around 10 kV/mm once cracking occurred.
  • Keywords
    Aging; Curing; Dielectric breakdown; Dielectric materials; Electronics packaging; Materials testing; Permittivity; Power electronics; Temperature; Transmission line matrix methods;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-6410-4
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2010.5490712
  • Filename
    5490712