Title :
Trapped Charge Distribution during the P/E Cycling of SONOS Memory
Author :
Pang, Huiqing ; Pan, Liyang ; Sun, Lei ; Wu, Dong ; Zhu, Jun
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
Abstract :
Two phases during the P/E cycling of 0.18mum SONOS are observed using a combined charge pumping method to extract the trapped charge distribution: holes accumulation at the initial term, and electrons accumulation after long term cycling. Better endurance characteristic is obtained through optimization to P/E condition and process technology
Keywords :
electron traps; hole traps; semiconductor storage; silicon compounds; 0.18 micron; P/E cycling; SONOS memory; charge pumping; electrons accumulation; endurance characteristic; holes accumulation; trapped charge distribution; CMOS process; CMOS technology; Channel hot electron injection; Charge carrier processes; Charge pumps; Degradation; Electron traps; Flash memory; SONOS devices; Testing;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251003
