Title :
Reliability Improvement in Multi-level Cu/SiOC Low k Integration
Author :
Chen, Y.W. ; Zou, Johnston ; Zhang, G. ; Chen, Steven ; Wang, Jianping ; Hu, T. ; Bei, E. ; Wang, Jimmy ; Fan, Allen ; Chen, I.C.
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai
Abstract :
In this paper, inter layer dielectric characteristic ramped voltage breakdown (VBD) performance of multiplayer Cu/SiOC interconnect was studied. The results showed that the breakdown reliability is highly process-related. Some dominating factors, such as via etching process, integration scheme used and Cu/dielectric interface etc., were discussed and proposed to improve breakdown reliability performance
Keywords :
copper; cryogenic electronics; dielectric properties; semiconductor device breakdown; semiconductor device reliability; silicon compounds; Cu-SiOC; breakdown reliability; dielectric characteristic; low k integration; multiplayer interconnect; voltage breakdown; Dielectric breakdown; Dielectric materials; Electric breakdown; Etching; Integrated circuit interconnections; Plasma applications; Plasma materials processing; Thermal management; Thermal stresses; Transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251009
