Title :
Ultra-Short-Channel Characteristics of Planar MOSFETs With Block Oxide
Author :
Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Huang, Kuo-Dong ; Lee, Tai-Yi ; Lin, Kao-Cheng
Author_Institution :
Dept. of Electr. Eng., National Sun Yat-Sen Univ., Kaohsiung
Abstract :
In this work, the investigation of block oxide used in planar MOSFETs has been studied. To solve these above issues and for the comparison, we propose two novel device architectures; one is called the FDSOI with block oxide (bFDSOI) and the other is called the Si on partial insulator with block oxide field-effect transistor (bSPIFET)
Keywords :
MOSFET; insulators; silicon-on-insulator; FDSOI; block oxide; partial insulator; planar MOSFET; ultra short channel characteristics; Annealing; Chemical technology; Dry etching; FETs; Lithography; MOSFETs; Planarization; Scanning electron microscopy; Silicon on insulator technology; Wet etching;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251017
