Title :
Fast electroplating TSV process development for the via-last approach
Author :
Li, H.Y. ; Liao, E. ; Pang, X.F. ; Yu, H. ; Yu, X.X. ; Sun, J.Y.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
One of challenge for the 3D integration by the TSV approach is the electroplating. Electroplating quality and time are important parameters for TSV cost and application. Solid Cu filling TSV (Through Si Via) with via diameter 20 μm and 65μm depth is achieved by the DC (directly current) electroplating within 40 minutes on 8 inch wafer.
Keywords :
Chemical processes; Costs; Filling; Materials science and technology; Microelectronics; Semiconductor materials; Solids; Sun; Testing; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
978-1-4244-6410-4
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2010.5490740
