Title :
Analysis of intrinsic small signal parameters in HEMTs
Author :
Abdel Aziz, M. ; Banna, M.E. ; Elsayed, M.
Author_Institution :
Air Defence Coll., Egypt
Abstract :
A charge control model was developed which is based on a single analytical function that describes the dependence of the three charges in HEMTs on gate voltage. These charges include: 2DEG, AlGaAs free electrons and neutralized donors. Closed form expressions for the intrinsic small signal model parameters in linear and saturation regions were derived. The contributions of both the AlGaAs and neutralized donor charges, which were commonly ignored in early models, were studied at different gate and drain bias voltages
Keywords :
capacitance; electric charge; high electron mobility transistors; semiconductor device models; two-dimensional electron gas; 2DEG; AlGaAs; AlGaAs free electrons; HEMTs; charge control model; closed form expressions; drain bias voltages; gate voltage; gate voltages; intrinsic small signal parameters; linear region; neutralized donors; saturation region; Capacitance; Differential equations; Electrons; Equivalent circuits; HEMTs; MODFETs; Performance analysis; Signal analysis; Transconductance; Voltage;
Conference_Titel :
Radio Science Conference, 1998. NRSC '98. Proceedings of the Fifteenth National
Conference_Location :
Cairo
Print_ISBN :
0-7803-5121-5
DOI :
10.1109/NRSC.1998.711504
