DocumentCode :
2730345
Title :
Application of Atomic Force Probing on 90nm DRAM Cell Failure Analysis
Author :
Yeh, Yu-Ching ; Lin, Chia-Lung ; Chen, Bi-Jen ; Tseng, Yuan-Wei ; Russell, Jeremy D.
fYear :
2006
fDate :
3-7 July 2006
Firstpage :
340
Lastpage :
343
Abstract :
This article presents a novel method to identify marginal faults in DRAM product via atomic force probing. Failing cells which are difficult to be identified by traditional methods were easily localized by current imaging. In addition, current-voltage curves were useful for judging failure root causes
Keywords :
DRAM chips; atomic force microscopy; failure analysis; 90 nm; DRAM failure analysis; atomic force probing; failure root causes; marginal faults; Atomic beams; Atomic force microscopy; Character generation; Failure analysis; Page description languages; Probes; Random access memory; Transistors; Tungsten; Virtual colonoscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
Type :
conf
DOI :
10.1109/IPFA.2006.250983
Filename :
4017082
Link To Document :
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