Title :
Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines
Author :
Ceric, H. ; Hollauer, Ch. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., TU Wien
Abstract :
We presented a simulation concept which connects microstructural mechanical properties of copper films to the overall stress distribution. The underlying model is designed by combining several earlier models which describe different microstructural contributions to stress build up. The mechanical effects of surrounding layers are also included in our analysis. The analysis of the models and simulation results and their comparison to the relevant experimental results has been carried out. The simulated stress distribution is comparable to the stresses measured after the deposition of copper films. The basic features of texture evolution seen in simulations are the same as those observed during measurements
Keywords :
copper; electromigration; electroplating; grain size; integrated circuit metallisation; integrated circuit modelling; surface texture; Cu; microstructural mechanical properties; stress build-up; stress distribution; texture development; texture evolution; Chemical vapor deposition; Copper; Electromigration; Grain boundaries; Integrated circuit interconnections; Mechanical factors; Microstructure; Packaging; Residual stresses; Thermal stresses;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.250987
