Growth and doping of β-GaN and β-(In,Ga)N films and heterostructures

Author

Brandt, O. ; Yang, B. ; Yang, H. ; Mullhauser, J.R. ; Ploog, K.H.

Author_Institution

Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany

fYear

1997

fDate

8-11 Sep 1997

Firstpage

5

Lastpage

10

Abstract

We discuss the growth of cubic GaN and (In,Ga)N films on GaAs by plasma-assisted molecular beam epitaxy. Conditions to be satisfied for the synthesis of single-phase films are pointed out. In the case of the binary compound GaN, strictly stoichiometric growth is required, while the ternary compound (In,Ga)N has to be grown N rich for reducing the amount of In segregating on the growth front. Finally, we discuss our finding of high p-type conductivities in (Be,O)-codoped GaN films in the light of recent theoretical studies of this subject

Keywords

III-V semiconductors; electrical conductivity; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; β-(In,Ga)N films; β-(In,Ga)N heterostructures; β-GaN films; β-GaN heterostructures; (Be,O)-codoped GaN; GaN:Be,O; doping; p-type conductivities; plasma-assisted MBE; plasma-assisted molecular beam epitaxy; single-phase films; Buffer layers; Conductive films; Conductivity; Doping; Epitaxial growth; Gallium arsenide; Gallium nitride; Molecular beam epitaxial growth; Plasmas; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711530

Filename

711530