Title :
Decoupling of cold carrier effects in hot carrier reliability of HfO2 gated nMOSFETs
Author :
Park, Hokyung ; Choi, Rino ; Song, Seung Chul ; Chang, Man ; Young, Chadwin D. ; Bersuker, Gennadi ; Lee, Byoung Hun ; Lee, Jack C. ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol.
Abstract :
To understand hot carrier effects on high-k dielectrics without cold carrier trapping, we have investigated hot carrier induced damage with channel and substrate hot carrier stresses. Comparing substrate hot carrier stress, channel hot carrier stress showed significant cold carrier injection during hot carrier injection. Using a relaxation bias, we are able to evaluate hot carrier induced permanent trap generation by decoupling cold carrier trapping
Keywords :
MOSFET; electron traps; hafnium compounds; high-k dielectric thin films; interface states; semiconductor device reliability; stress effects; HfO2; cold carrier injection; cold carrier trapping; high-k dielectrics; hot carrier injection; hot carrier stresses; nMOSFET; permanent trap generation; relaxation bias; reliability; Charge pumps; Dielectric substrates; Hafnium oxide; Hot carrier effects; Hot carriers; MOSFETs; Materials science and technology; Stress; Substrate hot electron injection; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251217
